Hoop stress development on silicon dioxide liner in through silicon via

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dc.contributor.author Juma, Mary A.
dc.contributor.author Zhang, Xuliang
dc.contributor.author Bai, He S.
dc.date.accessioned 2022-01-13T09:26:25Z
dc.date.available 2022-01-13T09:26:25Z
dc.date.issued 2015
dc.identifier.citation 2015 IEEE Advanced Information Technology, Electronic and Automation Control Conference (IAEAC) en_US
dc.identifier.isbn 978-1-4799-1980-2
dc.identifier.isbn 978-1-4799-1979-6
dc.identifier.uri https://ieeexplore.ieee.org/abstract/document/7428601
dc.identifier.uri http://repository.seku.ac.ke/handle/123456789/6681
dc.description DOI: 10.1109/IAEAC.2015.7428601 en_US
dc.description.abstract Through Silicon Via Interconnects are usually protected with liners. A research on liners was done and conclusion made that they experience reliability problems like hoop stress which put them and the Through Silicon Via in danger. Simulation using Analysis Software was done on Silicon Dioxide liner. A Through Silicon Via of internal radius five micrometers, silicon liner of thickness two micrometers and height one micrometer was used. The liner was subjected to an internal pressure of one thousand micro Pascal. From mechanical Analysis System Parametric Design Language fourteen, it was confirmed that hoop stress surely exists in liners and ways should be proposed to protect them alongside the Through Silicon Via. en_US
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.subject silicon dioxide liner en_US
dc.subject through silicon via en_US
dc.subject interconnect en_US
dc.subject reliability en_US
dc.subject analysis system en_US
dc.title Hoop stress development on silicon dioxide liner in through silicon via en_US
dc.type Presentation en_US


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