Abstract:
In this study, tin selenide was prepared at different ratios using tin and selenium pellets in glass
tube filled with argon and then heated up to 350'C. The resulting materials were cut Into ingots which
were used in preparation of thin films by thermal evaporation. The evaporation was done using Edwards
auto 306 coating unit. The chamber pressure was maintained at 5.0 x 10"mbars during the film
deposition. Thin films of tin-selenide produced using various ratios were characterized for optical
properties and sheet resistance. The optical measurements were done using UV-VJS-NIR
spectrophotometer Solid State 3700 DUV in the visible range (380-750nm) and the transmittance spectra
data obtained was analyzed using the SCOUT software. The films with ratio of J.I showed the highest
transmittance of 85% with a band gap energy obtained 3S 140eV. The electrical characterization
measurements were carried out using a four point probe at room temperature (25°(,) to obtain the sheet
resistivity. The value of resistivity for was 20.1 .oem.
