Please use this identifier to cite or link to this item: https://repository.seku.ac.ke/handle/123456789/6681
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dc.contributor.authorJuma, Mary A.-
dc.contributor.authorZhang, Xuliang-
dc.contributor.authorBai, He S.-
dc.date.accessioned2022-01-13T09:26:25Z-
dc.date.available2022-01-13T09:26:25Z-
dc.date.issued2015-
dc.identifier.citation2015 IEEE Advanced Information Technology, Electronic and Automation Control Conference (IAEAC)en_US
dc.identifier.isbn978-1-4799-1980-2-
dc.identifier.isbn978-1-4799-1979-6-
dc.identifier.urihttps://ieeexplore.ieee.org/abstract/document/7428601-
dc.identifier.urihttp://repository.seku.ac.ke/handle/123456789/6681-
dc.descriptionDOI: 10.1109/IAEAC.2015.7428601en_US
dc.description.abstractThrough Silicon Via Interconnects are usually protected with liners. A research on liners was done and conclusion made that they experience reliability problems like hoop stress which put them and the Through Silicon Via in danger. Simulation using Analysis Software was done on Silicon Dioxide liner. A Through Silicon Via of internal radius five micrometers, silicon liner of thickness two micrometers and height one micrometer was used. The liner was subjected to an internal pressure of one thousand micro Pascal. From mechanical Analysis System Parametric Design Language fourteen, it was confirmed that hoop stress surely exists in liners and ways should be proposed to protect them alongside the Through Silicon Via.en_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectsilicon dioxide lineren_US
dc.subjectthrough silicon viaen_US
dc.subjectinterconnecten_US
dc.subjectreliabilityen_US
dc.subjectanalysis systemen_US
dc.titleHoop stress development on silicon dioxide liner in through silicon viaen_US
dc.typePresentationen_US
Appears in Collections:School of Science and Computing (CS)

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