Juma, Mary A.; Zhang, Xuliang; Bai, He S.
(IEEE, 2016-11)
A segmented and unsegmented 3D insulated copper through silicon vias (TSVs) of diameter 10μm, height 100μm and silicon of sizes 100μm by 100μm by 100μm are modelled using analysis system (ANSYS) and equivalent circuit using ...